The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Jun. 12, 2008
Ki Seok Yang, Atlanta, GA (US);
Jaejoon Chang, Duluth, GA (US);
Kyu Hwan an, Dunwoody, GA (US);
Wangmyong Woo, Suwanee, GA (US);
Chang-ho Lee, Marietta, GA (US);
Younsuk Kim, Yong-in, KR;
Hyogun Bae, Seoul, KR;
Kijoong Kim, Hwasung, KR;
Shinichi Iizuka, Gyunggi-do, KR;
Ki Seok Yang, Atlanta, GA (US);
Jaejoon Chang, Duluth, GA (US);
Kyu Hwan An, Dunwoody, GA (US);
Wangmyong Woo, Suwanee, GA (US);
Chang-Ho Lee, Marietta, GA (US);
Younsuk Kim, Yong-in, KR;
Hyogun Bae, Seoul, KR;
Kijoong Kim, Hwasung, KR;
Shinichi Iizuka, Gyunggi-do, KR;
Abstract
Embodiments of the invention may provide for systems and methods for providing a power amplifier with integrated passive device, thereby improving the performance of the power amplifier. The power amplifier may include a signal amplification section, a power combining section, and a coupling device section that interconnects the signal amplification section and the power combining section. The signal amplification section may be implemented on a first substrate, and the power combining section may be implemented on a second substrate, where the first substrate and the second substrate may be different. The power combining section may be implemented by the integrated passive device (IPD) that may have characteristics of high performance passive device with flexibility of implementing diverse functions, including a notch filter, a low pass filter, and/or bypass capacitance for bias network. The power combining section implemented by the integrated passive device may have an improved power combining efficiency.