The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7745935 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 29, 2010

Filed:

Oct. 16, 2008
Applicants:

Gerald Beyer, Leuven, BE;

Sywert H. Brongersma, Eindhoven, NL;

Inventors:

Gerald Beyer, Leuven, BE;

Sywert H. Brongersma, Eindhoven, NL;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.


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Beyer, Gerald. (2010). Method to create super secondary grain growth in narrow trenches (U.S. Patent No. 7745935). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7745935

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