The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Sep. 13, 2007
Kikuo Saka, Hyogo, JP;
Kimihiko Yamashita, Hyogo, JP;
Toshiyuki Takemori, Saitama, JP;
Yuji Watanabe, Saitama, JP;
Kikuo Saka, Hyogo, JP;
Kimihiko Yamashita, Hyogo, JP;
Toshiyuki Takemori, Saitama, JP;
Yuji Watanabe, Saitama, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A disclosed semiconductor device provided with a power MOSFET includes: a semiconductor substrate constituting a drain; a trench formed on a surface of the semiconductor substrate; a gate electrode in the trench; a body diffusion layer on a surface side of the semiconductor substrate, the body diffusion layer being positioned adjacently to the trench and formed shallower than the trench; a source diffusion layer on the surface of the semiconductor substrate; a first interlayer insulating film formed on the gate electrode; and a source electrode film made of a metallic material and formed on the semiconductor substrate. A top surface of the gate electrode and a top surface of the first interlayer insulating film are formed in a recessed manner in the trench relative to the surface of the semiconductor substrate, and a surface portion of the semiconductor substrate for the trench is formed into a tapered shape.