The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Sep. 10, 2007
Tadao Inoue, Kawasaki, JP;
Katsuyoshi Yamamoto, Kawasaki, JP;
Narumi Ohkawa, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel regionin which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit regionin which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PWin the pixel region PWis formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PWof the pixel region, and a photodiode region PHDis embedded below the transistor well region PW