The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Jan. 27, 2006
Koji Otsuka, Niiza, JP;
Emiko Chino, Niiza, JP;
Masataka Yanagihara, Niiza, JP;
Sanken Electric Co., Ltd., , JP;
Abstract
A high electron mobility transistor is disclosed which has a triple-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. Whilst the aluminum nitride layers are of n-like conductivity, the gallium nitride layers are doped into p-type conductivity, with the consequent creation of pn junctions between the two kinds of buffer layers. Another pn junction is formed between one p-type gallium nitride layer and the adjoining n-like electron transit layer included in the main semiconductor region. The pn junctions serve for reduction of current leakage.