The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Feb. 23, 2007
Shinichi Tamai, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Atsushi Yamaguchi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same. Semiconductor lasers Dand Das two light emitting elements having different wavelengths are integrally formed on a common substrate. A semiconductor laminate A is deposited on an n-type contact layerin a semiconductor laser D, and a semiconductor laminate B is deposited in a semiconductor laser D. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrodeformed between the semiconductor lasers Dand Dis shared by the semiconductor lasers Dand D, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.