The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
May. 09, 2008
Jung-ho Song, Daejeon, KR;
Ki-soo Kim, Daejeon, KR;
Young-ahn Leem, Daejeon, KR;
Gyung-ock Kim, Seoul, KR;
Jung-Ho Song, Daejeon, KR;
Ki-Soo Kim, Daejeon, KR;
Young-Ahn Leem, Daejeon, KR;
Gyung-Ock Kim, Seoul, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.