The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2010

Filed:

Aug. 01, 2005
Applicants:

Cheng-chung Yang, Huatan Township, Changhua County, TW;

Shao-kun MA, Donggang Township, Pingtung County, TW;

Chuan-cheng Tu, Taipei, TW;

Jen-chau Wu, Hsinchu, TW;

Inventors:

Cheng-Chung Yang, Huatan Township, Changhua County, TW;

Shao-Kun Ma, Donggang Township, Pingtung County, TW;

Chuan-Cheng Tu, Taipei, TW;

Jen-Chau Wu, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.


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