Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device

Abstract

An ion doping apparatus includes: a chamber; a discharge sectionfor discharging a gaseous content from within the chamber; an ion sourcebeing provided in the chamberand including an inletthrough which to introduce a gas containing an element to be used for doping, the ion sourcedecomposing the gas introduced through the inletto generate ions containing the element to be used for doping; an acceleration sectionfor pulling out from the ion sourcethe ions generated at the ion sourceand accelerating the ions toward a target object held in the chamber; and a beam current meterfor measuring a beam current caused by the accelerated ions. The beam current is measured by the beam current metera plurality of times, and if a result of the measurements indicates a stability of the beam current, the ion doping apparatus automatically begins to implant into the target object the ions containing the element to be used for doping. Thus, an ion doping apparatus having excellent doping amount controllability is provided.