The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Feb. 08, 2007
Jae Chang Jung, Seoul, KR;
Jae Chang Jung, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for forming a fine pattern of a semiconductor device comprises the steps of: forming a first hard mask pattern having a width of Wand a thickness of Tover an underlying layer formed over a semiconductor substrate; forming a second hard mask film with a planar type over the resulting structure and planarizing the second hard mask s to expose the first hard mask pattern; removing the first hard mask pattern by a thickness Tfrom the top surface (0<T<T); performing a trimming process on the second hard mask film to form a second hard mask pattern having a slope side wall; performing a second trimming process on the second hard mask pattern to separate the second hard mask pattern from the first hard mask pattern and form a third hard mask pattern having a width of W; and patterning the underlying layer using the first hard mask pattern and the third hard mask pattern as etching masks.