The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7745323 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 29, 2010

Filed:

Nov. 07, 2005
Applicants:

Dong-su Park, Icheon-shi, KR;

Su Ho Kim, Icheon-shi, KR;

Inventors:

Dong-Su Park, Icheon-shi, KR;

Su Ho Kim, Icheon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a metal interconnection structure of a semiconductor device, comprising lower metal interconnection layers disposed on a semiconductor substrate, a buffer layer made of a metal oxide disposed thereon, an intermetallic dielectric layer made of a low-k material disposed on the buffer layer of the metal oxide, and an upper metal interconnection layer disposed on the intermetallic dielectric layer and electrically connected through the intermetallic dielectric layer and buffer layer to the lower metal interconnection layers.


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Park, Dong-Su. (2010). Metal interconnection of a semiconductor device and method of fabricating the same (U.S. Patent No. 7745323). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7745323

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