The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Dec. 22, 2006
Hsiang-yuan Cheng, Taipei, TW;
Shin-chuan Chiang, Taipei, TW;
Shih-hsiang Lai, Taipei County, TW;
Chin-chih Yu, Hsinchu, TW;
Bor-chuan Chuang, Tainan County, TW;
Hsiang-Yuan Cheng, Taipei, TW;
Shin-Chuan Chiang, Taipei, TW;
Shih-Hsiang Lai, Taipei County, TW;
Chin-Chih Yu, Hsinchu, TW;
Bor-Chuan Chuang, Tainan County, TW;
Taiwan TFT LCD Association, Hsinchu, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Au Optronics Corporation, Hsinchu, TW;
Hannstar Display Corporation, Taipei County, TW;
Chi Mei Optoelectronics Corporation, Tainan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
TPO Dispalys Corp., Miao-Li County, TW;
Abstract
A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.