The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Jun. 29, 2006
Ha-jin Kim, Suwon-si, KR;
Sang-mock Lee, Yongin-si, KR;
Ha-Jin Kim, Suwon-si, KR;
Sang-Mock Lee, Yongin-si, KR;
Samsung SDI Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method of growing carbon nanotubes and a method of manufacturing a field emission device using the same is provided. The method of growing carbon nanotubes includes steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes, forming an inactivation layer on the catalyst metal layer to reduce the activity of the catalyst metal layer, and growing carbon nanotubes on a surface of the catalyst metal layer. Because the inactivation layer partially covers the catalyst metal layer, carbon nanotubes are grown on a portion of the catalyst metal layer that is not covered by the inactivation layer. Thus, density of the carbon nanotubes can be controlled. This method for growing carbon nanotubes can be used to make an emitter of a field emission device. The field emission device having carbon nanotube emitter made of this method has superior electron emission characteristics.