The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Aug. 11, 2008
Chao-feng Sung, Miaoli County, TW;
Chih-wei Chu, Taipei, TW;
Yuh-zheng Lee, Hsinchu, TW;
Chao-kai Cheng, Hsinchu, TW;
Chao-Feng Sung, Miaoli County, TW;
Chih-Wei Chu, Taipei, TW;
Yuh-Zheng Lee, Hsinchu, TW;
Chao-Kai Cheng, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.