The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Aug. 30, 2007
Hiroshi Furuta, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Ichiro Mizuguchi, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A first mathematical expression indicating a dependence of SER on an information storage node diffusion layer area at the same information storage node voltage Vn is derived with a use of a result of measuring a relationship between SER and the information storage node diffusion layer area of a storage circuit or an information holding circuit composed of MISFET using a plurality of information storage node voltages Vn as a parameter. Then, a second mathematical expression is derived from the measurement result by substituting a relationship indicating a dependence of SER on an information storage node voltage at the same information storage node diffusion layer area Sc into the first mathematical expression. SER can be calculated by substituting a desired information storage node diffusion layer area and a desired information storage node voltage of a storage circuit or an information holding circuit into the second mathematical expression.