The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Dec. 14, 2007
Applicants:
Sang-hoon Lee, Seoul, KR;
Dong-yun Shin, Seoul, KR;
Inventors:
Sang-Hoon Lee, Seoul, KR;
Dong-Yun Shin, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a memory device using a multi-domain state of a semiconductor material, and more particularly to a magnetic memory device, in which a ferromagnetic layer for recording magnetic data serves as a sensing layer so as to have a simple structure, shorten a manufacturing process, and reduce the unit cost of production. The planar hall effect or magneto-resistance is used to measure multi-domain states so as to read data stored in a multi-level state.