The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

May. 20, 2008
Applicants:

Yuichiro Haramoto, Yamanashi, JP;

Takamasa Kato, Yamanashi, JP;

Kohki Hiroshima, Yamanashi, JP;

Inventors:

Yuichiro Haramoto, Yamanashi, JP;

Takamasa Kato, Yamanashi, JP;

Kohki Hiroshima, Yamanashi, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/13 (2006.01); G02F 1/133 (2006.01); C09K 19/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes first electrodes, second electrodes, third electrodes, heaters, and memory cells between the first electrodes and the heaters. Each third electrode is provided on the heaters, and each second electrode is provided at a side portion of the heaters. Each memory cell contains an electroconductive liquid crystal compound having a long linear conjugate structure and exhibiting a smectic phase as a liquid crystal phase. Information can be written in the memory cells by selectively heating the heaters to cause the corresponding memory cells to have both electroconductivity and optical anisotropy.


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