The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Dec. 05, 2008
Henry Tin-hang Yung, Hsin-Chu County, TW;
Chao-ping Huang, Hsin-Chu, TW;
Steve Wiyi Yang, Hsin-Chu Hsien, TW;
Henry Tin-Hang Yung, Hsin-Chu County, TW;
Chao-Ping Huang, Hsin-Chu, TW;
Steve Wiyi Yang, Hsin-Chu Hsien, TW;
MStar Semiconductor, Inc., ChuPei, Hsin-Chu Hsien, TW;
Abstract
An analog circuit architecture is fabricated with dual gate oxides and dual voltage supplies. In the analog circuit architecture, different kinds of devices/transistors with different gate oxide thicknesses are biased by different voltages, such that advantages of each device technology are mixed to enhance total performance of the analog circuit. For example, thin oxide 0.18 um transistors are biased at 1.8V for higher speed and lower power consumption, whereas thick oxide 0.35 um transistors are biased at 3.3V for a wider signal swing range.