The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Oct. 30, 2007
Applicants:

Bailey R. Jones, Mohnton, PA (US);

Sean Lian, Singapore, SG;

Simon John Molloy, Allentown, PA (US);

Inventors:

Bailey R. Jones, Mohnton, PA (US);

Sean Lian, Singapore, SG;

Simon John Molloy, Allentown, PA (US);

Assignee:

Agere Systems Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure is provided which eliminates the contact resistance traditionally associated with a junction between one or more contacts and a buried conductive structure formed in the semiconductor structure. The semiconductor structure includes a first insulating layer formed on a semiconductor layer and a conductive structure formed on at least a portion of the first insulating layer. A second insulating layer is formed on at least a portion of the conductive structure. At least one contact is formed through the second insulating layer and electrically connected to the conductive structure. The contact and the conductive structure are formed as a substantially homogeneous structure in a same processing step.


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