The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Oct. 27, 2008
Applicants:
Dae-ho Choo, Yongin-si, KR;
Dong-cheol Kim, Suwon-si, KR;
Inventors:
Dae-Ho Choo, Yongin-si, KR;
Dong-Cheol Kim, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side. The intrinsic semiconductor layer includes an amorphous semiconductor layer and a crystalline semiconductor layer including a plurality of crystals. A diameter of a crystal of the plurality of crystals is equal to or less than approximately 100 angstroms.