The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Jul. 19, 2005
Chikako Yoshida, Kawasaki, JP;
Hiroshi Minakata, Kawasaki, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Shinji Miyagaki, Kawasaki, JP;
Yasuyuki Tamura, Kawasaki, JP;
Chikako Yoshida, Kawasaki, JP;
Hiroshi Minakata, Kawasaki, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Shinji Miyagaki, Kawasaki, JP;
Yasuyuki Tamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises a gate insulating film including a first dielectric film of HfAlO(0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.