The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Jan. 28, 2008
Kenji Hatori, Chiyoda-ku, JP;
Atsushi Narazaki, Chiyoda-ku, JP;
Kenji Hatori, Chiyoda-ku, JP;
Atsushi Narazaki, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a main surface and a semiconductor element having an insulated gate field effect portion formed in the semiconductor substrate. The semiconductor element includes an nregion, an n-type source region, a p-type base region, an nregion, and a gate electrode. The nregion and the n-type source region are formed in the main surface. The p-type base region is formed in the main surface adjacent to the n-type source region. The nregion is formed in the main surface adjacent to the p-type base region and opposed to the n-type source region with the p-type base region being interposed, and has an impurity concentration higher than the nregion. The nregion is formed in the main surface adjacent to the p-type base region and to the nregion.