The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Sep. 15, 2005
Applicants:

Kazuhisa Fukuda, Minato-ku, JP;

Chiaki Sasaoka, Minato-ku, JP;

Akitaka Kimura, Minato-ku, JP;

Inventors:

Kazuhisa Fukuda, Minato-ku, JP;

Chiaki Sasaoka, Minato-ku, JP;

Akitaka Kimura, Minato-ku, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 31/00 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layerhas a superlattice structure composed of GaN layers and AlGaN layers, which are alternately layered on each other. The p type cladding layerhas a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region, whereas the dislocation density is relatively high in a region directly above a current-confining region


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