The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Mar. 08, 2006
Applicants:

Yang-ho Bae, Suwon-si, KR;

Chang-oh Jeong, Suwon-si, KR;

Min-seok OH, Yongin-si, KR;

Je-hun Lee, Seoul, KR;

Beom-seok Cho, Seoul, KR;

Inventors:

Yang-Ho Bae, Suwon-si, KR;

Chang-Oh Jeong, Suwon-si, KR;

Min-Seok Oh, Yongin-si, KR;

Je-Hun Lee, Seoul, KR;

Beom-Seok Cho, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current ('I') for turning on the TFT and increasing the off-current ('I') for turning off the TFT due to the oxidation-blocking layer.


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