The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Mar. 27, 2008
Naoki Oda, Tokyo, JP;
Susumu Komiyama, Tokyo, JP;
Iwao Hosako, Tokyo, JP;
NEC Corporation, Tokyo, JP;
The University of Tokyo, Tokyo, JP;
National Institute of Information and Communications Technology, Tokyo, JP;
Abstract
In a micro-bridge structure in which a temperature detecting portion(diaphragm) including a bolometer thin filmis supported by a supporting portionin a state floated from a circuit substrate, a reflective filmreflecting a THz wave is formed on the circuit substrate, an absorbing filmabsorbing the THz wave is formed on the temperature detecting portion, and an optical resonance structure is formed by the reflective filmand the temperature detecting portion. And a gap between the reflective filmand the temperature detecting portionis set approximately ¼ of a wavelength of an infrared ray on the basis of the wavelength of the infrared ray (in a range of approximately 1.5 to 2.5 μm, for example), and a sheet resistance of the temperature detecting portionis set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (in a range of approximately 10 to 100 Ω/sq.). By this arrangement, the absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.