The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

May. 06, 2008
Applicants:

Ajeet Rohatgi, Marietta, GA (US);

Vichai Meemongkolkiat, Atlanta, GA (US);

Inventors:

Ajeet Rohatgi, Marietta, GA (US);

Vichai Meemongkolkiat, Atlanta, GA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.


Find Patent Forward Citations

Loading…