The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Jun. 26, 2007
Applicants:

Hyun-sik Park, Ichon-shi, KR;

Ky-hyun Han, Ichon-shi, KR;

Inventors:

Hyun-Sik Park, Ichon-shi, KR;

Ky-Hyun Han, Ichon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device includes etching a substrate to form a first recess having a micro trench, etching the substrate disposed under the first recess to form a second recess having a profile substantially vertical and a width greater than a portion of the first recess where no micro trench is formed, etching the substrate disposed under the second recess to form a third recess having a profile substantially spherical, and forming a gate pattern over a resultant recess including the first to third recesses.


Find Patent Forward Citations

Park, Hyun-Sik. (2010). Semiconductor device with bulb type recess gate and method for fabricating the same (U.S. Patent No. 7741223). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7741223

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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