The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Apr. 11, 2005
Young-sub You, Kyungi-Do, KR;
Jae-young Park, Kyungi-Do, KR;
Won-shik Shin, Kyungi-Do, KR;
Hyeon-deok Lee, Seoul, KR;
Ki-vin Im, Seoul, KR;
Seok-woo Nam, Kyungi-Do, KR;
Hun-young Lim, Kyungi-Do, KR;
Won-jun Jang, Seoul, KR;
Yong-woo Hyung, Kyungi-Do, KR;
Young-Sub You, Kyungi-Do, KR;
Jae-Young Park, Kyungi-Do, KR;
Won-Shik Shin, Kyungi-Do, KR;
Hyeon-Deok Lee, Seoul, KR;
Ki-Vin Im, Seoul, KR;
Seok-Woo Nam, Kyungi-Do, KR;
Hun-Young Lim, Kyungi-Do, KR;
Won-Jun Jang, Seoul, KR;
Yong-Woo Hyung, Kyungi-Do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.