The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Dec. 01, 2008
Toshiyuki Takewaki, Kawasaki, JP;
Kazuyoshi Ueno, Kawasaki, JP;
Toshiyuki Takewaki, Kawasaki, JP;
Kazuyoshi Ueno, Kawasaki, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
In a semiconductor device, an insulating interlayer is provided above a semiconductor substrate, and a plurality of first wiring layers and a plurality of second wiring layers are formed in the insulating interlayer. The first wiring layers are substantially composed of copper, and are arranged in parallel at a large pitch. The second wiring layers are substantially composed of copper, and are arranged in parallel at a small pitch. A first metal capping layer is formed on each of the first wiring layers, and a second metal capping layer is formed on each of the second wiring layers. The second metal capping layer has a smaller thickness than that of the first metal capping layer.