The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Jun. 30, 2008
Hong-gu Yi, Kyoungki-do, KR;
Hong-Gu Yi, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
A method for fabricating a vertical channel transistor in a semiconductor device includes forming a plurality of pillars arranged in a first direction and a second direction crossing the first direction over a substrate, wherein each of the pillars includes a hard mask pattern thereon, forming a bit line region in the substrate between the pillars, forming a first sidewall insulation layer on a sidewall of each of the pillars, forming an insulation layer for filling a space between the pillars, forming a mask pattern for exposing the substrate between lines of the pillars arranged in the first direction over a resulting structure including the insulation layer, etching the insulation layer and the substrate using the mask pattern as an etch barrier to form a trench for defining a bit line in the substrate, and forming a second sidewall insulation layer over a resulting structure including the trench.