The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Sep. 19, 2006
Tarng-shiang HU, Hsinchu, TW;
Yi-kai Wang, Hsinchu, TW;
Jing-yi Yan, Taoyuan, TW;
Tsung-hsien Lin, Hsinchu, TW;
Jia-chong Ho, Hsinchu County, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Yi-Kai Wang, Hsinchu, TW;
Jing-Yi Yan, Taoyuan, TW;
Tsung-Hsien Lin, Hsinchu, TW;
Jia-Chong Ho, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.