The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Nov. 07, 2006
Applicant:

Fumitoshi Sugimoto, Kawasaki, JP;

Inventor:

Fumitoshi Sugimoto, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The method for fabricating the semiconductor device includes the step of forming a photoresist filmover a substrate, the step of exposing interconnection patterns to the photoresist film, the step of exposing to the photoresist filmhole patterns of a plurality of holes positioned at ends or bent portions of the interconnection patterns where holes to be connected to the interconnection patterns are to be formed, and the step of developing the photoresist filmwith the interconnection patterns and the holes patterns exposed to. Thus, the insufficient exposure energy at the ends or the bent portions of the patterns due to optical proximity effect is compensated to prevent the shortening at the pattern ends or the rounding at the pattern bent portions. The contacts with the contact plugs connected to the pattern ends or the pattern bent portions can be ensured.


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