The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Oct. 23, 2007
Applicants:
Oleg Ledyaev, Gyunggi-do, KR;
Ki Ho Park, Gyunggi-do, KR;
SI Hyuk Lee, Gyunggi-do, KR;
Soo Min Lee, Seoul, KR;
Inventors:
Oleg Ledyaev, Gyunggi-do, KR;
Ki Ho Park, Gyunggi-do, KR;
Si Hyuk Lee, Gyunggi-do, KR;
Soo Min Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyunggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.