The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Dec. 14, 2006
Kenchi Ito, Cambridge, GB;
Hiromasa Takahashi, Tokyo, JP;
Takayuki Kawahara, Tokyo, JP;
Riichiro Takemura, Tokyo, JP;
Thibault Devolder, Massy, FR;
Paul Crozat, Les Ulis, FR;
Joo-von Kim, Mass, FR;
Claude Chappert, Garches, FR;
Kenchi Ito, Cambridge, GB;
Hiromasa Takahashi, Tokyo, JP;
Takayuki Kawahara, Tokyo, JP;
Riichiro Takemura, Tokyo, JP;
Thibault Devolder, Massy, FR;
Paul Crozat, Les Ulis, FR;
Joo-von Kim, Mass, FR;
Claude Chappert, Garches, FR;
Hitachi, Ltd., Tokyo, JP;
Centre National de la Recherche Scientifique, Paris, FR;
Universite Paris Sud XI, Orsay, FR;
Abstract
A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.