The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2010

Filed:

Oct. 17, 2007
Applicant:

Masahisa Iida, Osaka, JP;

Inventor:

Masahisa Iida, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor storage device according to the present invention comprises a plurality of memory cells each provided with an access transistor in which a source is connected to a bit line and a gate is connected to a word line and a capacitor in which a storage electrode is connected to a drain of the access transistor, the plurality of memory cells being placed in a matrix shape in column and row directions, a sense amplifier circuit connected to the source of the access transistor via the bit line, a bit-line precharge voltage generating circuit for generating a bit-line precharge voltage lower than a sense amplifier supply voltage to be supplied to the sense amplifier circuit and supplying the generated bit-line precharge voltage to the bit line, and a cell plate voltage generating circuit for generating a cell plate voltage set to be lower than the bit-line precharge voltage and supplying the generated cell plate voltage to a plate electrode of the capacitor.


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