The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Sep. 02, 2009
Shigeo Yoshii, Osaka, JP;
Ichiro Yamashita, Nara, JP;
Shigeo Yoshii, Osaka, JP;
Ichiro Yamashita, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An object of the present invention is to provide a resistive nonvolatile memory element having an electric current path which can be realized by a simple and convenient process, and capable of allowing for micro-fabrication. The resistive nonvolatile memory element of the present invention includes first electrode, oxide semiconductor layerwhich is formed on the first electrodeand the resistance of which is altered depending on the applied voltage, metal nanoparticleshaving a diameter of between 2 nm and 10 nm arranged on the oxide semiconductor layer, tunnel barrier layerformed on the oxide semiconductor layerand on the metal nanoparticles, and second electrodeformed on the tunnel barrier layer, in which the metal nanoparticlesare in contact with the oxide semiconductor layer