The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Mar. 30, 2006
Shuichi Kikuchi, Gunma, JP;
Shigeaki Okawa, Tochigi, JP;
Kiyofumi Nakaya, Saitama, JP;
Toshiyuki Takahashi, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Shigeaki Okawa, Tochigi, JP;
Kiyofumi Nakaya, Saitama, JP;
Toshiyuki Takahashi, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.