The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Apr. 03, 2008
Hideaki Kondo, Kyoto, JP;
Toshiyuki Moriwaki, Osaka, JP;
Masaki Tamaru, Kyoto, JP;
Takashi Andoh, Shiga, JP;
Hideaki Kondo, Kyoto, JP;
Toshiyuki Moriwaki, Osaka, JP;
Masaki Tamaru, Kyoto, JP;
Takashi Andoh, Shiga, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor integrated circuit device capable of suppressing variations in transistor characteristics due to the well proximity effect is provided. Standard cell rows are arranged in a vertical direction, each standard cell row including standard cells arranged in a horizontal direction. In the standard cell rows, positions of the N well and the P region in the vertical direction are switched every other row. Adjacent standard cell rows share the P region or the N well. A distance from a PMOS transistor located at an end of a standard cell row to an end of an N well is greater than or equal to a width of an N well shared by standard cell rows.