The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Sep. 24, 2004
Reinhard Losehand, München, DE;
Reinhard Losehand, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A high-frequency diode has a first semiconductor area with a first conductivity type as well as a barrier area adjacent to the first semiconductor area, which has a second conductivity type, which differs from the first conductivity type. Further, the high-frequency diode has a second semiconductor area adjacent to the barrier area, which has the second conductivity type and a dopant concentration which is lower than the dopant concentration of the barrier are or equal to zero. Further, the high-frequency diode has a third semiconductor area adjacent to the second semiconductor area, which has the same conductivity type and a higher dopant concentration than the barrier area. Through such a structure it is possible to provide a high-frequency diode with short switching times and low bias.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile