The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jun. 07, 2007
June-o Song, Yongin-si, KR;
Tae-yeon Seong, Seoul, KR;
Kyoung-kook Kim, Suwon-si, KR;
Hyun-gi Hong, Gwanju-si, KR;
Kwang-ki Choi, Suwon-si, KR;
Hyun-soo Kim, Hwaseong-si, KR;
June-o Song, Yongin-si, KR;
Tae-yeon Seong, Seoul, KR;
Kyoung-kook Kim, Suwon-si, KR;
Hyun-gi Hong, Gwanju-si, KR;
Kwang-ki Choi, Suwon-si, KR;
Hyun-soo Kim, Hwaseong-si, KR;
Samsung Electro-Mechanics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.