The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jul. 14, 2006
Masaki Ohya, Tokyo, JP;
Masaki Ohya, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer () comprised of a group III nitride compound semiconductor; a current blocking layer () which is formed on the active layer () and has a striped aperture (); a superlattice layer (p-type layer) which buries the aperture () and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer () which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer () is represented as x2, it is represented as x1<x2.