The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Aug. 16, 2005
Min Ho Kim, Kyungki-do, KR;
Masayoshi Koike, Kyungki-do, KR;
Kyeong Ik Min, Seoul, KR;
Seong Suk Lee, Chunlabook-do, KR;
Sung Hwan Jang, Kyungki-do, KR;
Min Ho Kim, Kyungki-do, KR;
Masayoshi Koike, Kyungki-do, KR;
Kyeong Ik Min, Seoul, KR;
Seong Suk Lee, Chunlabook-do, KR;
Sung Hwan Jang, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.