The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2010

Filed:

Mar. 24, 2008
Applicants:

Gyoo-chul JO, Yongin-si, KR;

Kwang-nam Kim, Yongin-si, KR;

Inventors:

Gyoo-Chul Jo, Yongin-si, KR;

Kwang-Nam Kim, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present embodiments relate to an etchant and a method of fabricating an electric device including a thin film transistor. The etchant includes a fluorine ion (F) source, hydrogen peroxide (HO), a sulfate, a phosphate, an azole-based compound, and a solvent. The etchant and method of fabricating an electric device including a thin film transistor, can etch a multi-layered film including copper layer, and a titanium or titanium alloy layer in a batch and can provide a thin film transistor having a good pattern profile at high yield. When reusing the etchant, uniform etching performance can be maintained with a long replacement period of the etchant, and therefore costs can be saved.


Find Patent Forward Citations

Loading…