The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Dec. 21, 2005
Jonathan Jung-ching Ho, Fremont, CA (US);
Hong-tsz Pan, Cupertino, CA (US);
Jonathan Jung-Ching Ho, Fremont, CA (US);
Hong-Tsz Pan, Cupertino, CA (US);
XILINX, Inc., San Jose, CA (US);
Abstract
Fluid-based dielectric material is used to backfill multiple patterned metal layers of an IC on a wafer. The patterned metal layers are fabricated using conventional CMOS techniques, and are IMD layers in particular embodiments. The dielectric material(s) are etched out of the IC to form a metal network, and fluid dielectric material precursor, such as a polyarylene ether-based resin, is applied to the wafer to backfill the metal network with low-k fluid-based dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile