The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Oct. 31, 2006
Applicants:
Nirmal David Theodore, Mesa, AZ (US);
John L. Freeman, Jr., Mesa, AZ (US);
Clarence J. Tracy, Tempe, AZ (US);
Inventors:
Nirmal David Theodore, Mesa, AZ (US);
John L. Freeman, Jr., Mesa, AZ (US);
Clarence J. Tracy, Tempe, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.