The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Nov. 13, 2008
Hiroshi Yamauchi, Fukuyama, JP;
Hiroshi Yamauchi, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for manufacturing a semiconductor device comprising the steps of: forming a first insulating film to be used as a mask for forming a trench region directly above a semiconductor substrate; forming the trench region on the semiconductor substrate using the mask; forming a second insulating film directly above the semiconductor substrate which includes the trench region and the first insulating film so that the second insulating film has a recess above the trench region and a protrusion above the first insulating film; removing the protrusion down to the bottom of the recess as a first removal step; and removing the first insulating film and the second insulating film in accordance with a chemical mechanical polishing method so that the step formed of the recess and protrusion is reduced to 20 nm or less as a second removal step.