The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Aug. 28, 2006
Muhammad Mustafa Hussain, Austin, TX (US);
Naim Moumen, Walden, NY (US);
Gabriel Gebara, Austin, TX (US);
Ed Labelle, Austin, TX (US);
Sidi Lanee, Austin, TX (US);
Barry Sassman, Cedar Park, TX (US);
Raj Jammy, Austin, TX (US);
Muhammad Mustafa Hussain, Austin, TX (US);
Naim Moumen, Walden, NY (US);
Gabriel Gebara, Austin, TX (US);
Ed Labelle, Austin, TX (US);
Sidi Lanee, Austin, TX (US);
Barry Sassman, Cedar Park, TX (US);
Raj Jammy, Austin, TX (US);
Sematech, Inc., Austin, TX (US);
Abstract
Methods for fabricating nanoscale features are disclosed. One technique involves depositing onto a substrate, where the first layer may be a silicon layer and may subsequently be etched. A second layer and third layer may be deposited on the etch first layer, followed by the deposition of a silicon cap. The second and third layer may be etched, exposing edges of the second and third layers. The cap and first layer may be removed and either the second or third layer may be etched, creating a nanoscale pattern.