The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Oct. 20, 2008
Daniel N. Carothers, Oro Valley, AZ (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
VU A. VU, Falls Church, VA (US);
Joe Giunta, Warrenton, VA (US);
Jonathan N. Ishii, Fredericksburg, VA (US);
Daniel N. Carothers, Oro Valley, AZ (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
Vu A. Vu, Falls Church, VA (US);
Joe Giunta, Warrenton, VA (US);
Jonathan N. Ishii, Fredericksburg, VA (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Abstract
An improved method for manufacturing a vertical germanium detector is disclosed. Initially, a detector window is opened through an oxide layer on a single crystalline substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished and removed until only a portion of the amorphous germanium layer is located around the single crystal germanium layer. A tetraethyl orthosilicate (TEOS) layer is deposited on the amorphous germanium layer and the single crystal germanium layer. An implant is subsequently performed on the single crystal germanium layer. After an oxide window has been opened on the TEOS layer, a titanium layer is deposited on the single crystal germanium layer to form a vertical germanium detector.