The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
May. 26, 2006
Jessy Bustos, Le Touvet, FR;
Philippe Thony, Saint Joseph de Riviére, FR;
Philippe Coronel, Barraux, FR;
Jessy Bustos, Le Touvet, FR;
Philippe Thony, Saint Joseph de Riviére, FR;
Philippe Coronel, Barraux, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A first circuit element, which is reflective, is formed. A first layer, which is attenuating, is formed. above the first circuit element. A second layer, which is transparent, is formed above the first layer to fill an aperture in the first layer. An overlying lithography resist layer is then exposed to a radiation flux level below a development threshold but high enough that a sum of the radiation flux level and a reflected secondary radiation flux level exceeds the development threshold. The lithography resist layer is developed so as to obtain a mask having an opening through which the first and second layers are removed to form a second aperture which is filled to form a second circuit element.