The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Dec. 28, 2006
Applicant:
Jong-bum Park, Ichon-shi, KR;
Inventor:
Jong-Bum Park, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a capacitor dielectric includes depositing a zirconium oxide layer, performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase, and depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase.